r07ds0309ej0600 rev.6.00 page 1 of 7 jan 10, 2014 preliminary datasheet rqk0605jgdqa silicon n channel mos fet power switching features ? low on-resistance r ds(on) = 82 m typ (v gs = 10 v, i d = 1.5 a) ? low drive current ? high speed switching ? 4.5 v gate drive outline renesas package code: plsp0003zb-a (package name: mpak) 1. source 2. gate 3. drain s d g 2 1 3 1 2 3 note: marking is ?jg?. absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current i d 3.1 a drain peak current i d(pulse) note1 4.5 a body - drain diode reverse drain current i dr 3.1 a channel dissipation pch note2 0.8 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. when using the glass epoxy board (fr-4: 40 40 1 mm) r07ds0309ej0600 rev.6.00 jan 10, 2014
rqk0605jgdqa preliminary r07ds0309ej0600 rev.6.00 page 2 of 7 jan 10, 2014 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ? ? 10 a v gs = 16 v, v ds = 0 drain to source leak current i dss ? ? 1 a v ds = 60 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 ? 2.0 v v ds = 10 v, i d = 1 ma drain to source on state resistance r ds(on) ? 82 103 m i d = 1.5 a, v gs = 10 v note3 r ds(on) ? 93 131 m i d = 1.5 a, v gs = 4.5 v note3 forward transfer admittance |y fs | 3.6 6 ? s i d = 1.5 a, v ds = 10 v note3 input capacitance ciss ? 405 ? pf v ds = 10 v, v gs = 0, f = 1 mhz output capacitance coss ? 58 ? pf reverse transfer capacitance crss ? 23 ? pf turn - on delay time t d(on) ? 14 ? ns i d = 1 a, v gs = 10 v, r l = 10 , rg = 4.7 rise time t r ? 43 ? ns turn - off delay time t d(off) ? 43 ? ns fall time t f ? 3.7 ? ns total gate charge qg ? 6.9 ? nc v dd = 10 v, v gs = 10 v, i d = 3.1a gate to source charge qgs ? 0.9 ? nc gate to drain charge qgd ? 0.8 ? nc body - drain diode forward voltage v df ? 0.8 ? v i f = 1.5 a, v gs = 0 note3 notes: 3. pulse test
rqk0605jgdqa preliminary r07ds0309ej0600 rev.6.00 page 3 of 7 jan 10, 2014 main characteristics ambient temperature ta (c) *when using the glass epoxy board (fr-4: 40 40 1 mm) channel dissipation pch (w) maximum channel power dissipation curve maximum safe operation area drain to source voltage v ds (v) drain current i d (a) drain current i d (a) typical output characteristics drain to source voltage v ds (v) typical transfer characteristics (1) gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics (2) gate to source voltage v gs (v) drain current i d (a) gate to source cutoff voltage vs. case temperature case temperature tc (c) gate to source cutoff voltage v gs(off) (v) 0 0.4 0.2 0.6 1.0 0.8 1.2 0 25 50 75 100 125 150 0.01 0.1 1 10 0.1 1 10 100 0.01 100 2.2v 2.4 v 2.0 v v gs = 0 v 5 10 4 8 3 6 2 4 1 2 0 0 0 1 2 3 4 5 012 0.0001 0.001 0.01 0.1 1 1.5 0 0.5 2 2.5 3 1.0 1.5 0.5 2.0 2.5 ?25 0 25 50 75 100 125 150 v ds = 10 v pulse test 5,7,9,10 v ?25c i d = 10 ma 1 ma 3 v 3 2.1 v 2.3 v 2.6v pulse test tc = 25 c tc = 75c 25c 2.5 v v ds = 10 v pulse test 1 10 tc = 75c 25c ?25c v ds = 10 v pulse test 0.1 ma dc operatio n pw = 10 ms 1 ms tc = 25c 100 s operation in this area is limited by r ds(on)
rqk0605jgdqa preliminary r07ds0309ej0600 rev.6.00 page 4 of 7 jan 10, 2014 drain to source saturation voltage vs. gate to source voltage gate to source voltage v gs (v) drain to source saturation voltage v ds(on) (mv) static drain to source on state resistance vs. drain current drain current i d (a) drain to source on state resistance r ds(on) () static drain to source on state resistance vs. case temperature case temperature tc (c) drain to source on state resistance r ds(on) (m) static drain to source on state resistance vs. case temperature case temperature tc (c) drain to source on state resistance r ds(on) (m) forward transfer admittance vs. drain current drain current i d (a) forward transfer admittance |y fs | (s) zero gate voltage drain current vs. case temperature case temperature tc (c) zero gate voltage drain current i dss (na) 0 100 200 300 400 0246810 0.5 a 1.0 a 0.1 a pulse test tc = 25c 0.1 0.3 1.0 0.01 0.03 0.1 1 0.3 3 10 ?25 0 25 50 75 100 125 150 0.2 a ?25 0 25 50 75 100 125 150 0.2 a 0.1 1 10 0.1 1 10 10000 1 10 100 1000 ?25 0 25 50 75 100 125 150 50 100 150 200 0.5 a i d = 1.5 a 1 a pulse test v gs = 4.5 v 50 100 150 200 i d = 1.5 a pulse test v gs = 10 v 0.5 a i d = 1.5 a 1 a 0.2 a 10 v v gs = 4.5 v 100 pulse test v gs = 0 v v ds = 60 v pulse test tc = 25c ?25c 25c tc = 75c pulse test v ds = 10 v
rqk0605jgdqa preliminary r07ds0309ej0600 rev.6.00 page 5 of 7 jan 10, 2014 drain to source voltage v ds (v) dynamic input characteristics gate charge qg (nc) gate to source voltage v gs (v) switching characteristics switching time t (ns) typical capacitance vs. drain to source voltage drain to source voltage v ds (v) ciss, coss, crss (pf) input capacitance vs. gate to source voltage gate to source voltage v gs (v) ciss (pf) reverse drain current i dr (a) reverse drain current vs. source to drain voltage source to drain voltage v sd (v) body-drain diode forward voltage vs. case temperature case temperature tc (c) body-drain diode forward voltage v sdf (v) drain current i d (a) 02 46810 100 80 60 20 40 20 16 12 8 4 0102030405060 1 10 100 1000 10000 400 450 500 550 600 650 ?10 ?5 0 5 10 v ds = 0 v f = 1 mhz 0 0.80.4 1.2 1.6 2.0 3 5 4 2 1 0 0.2 0.4 1.0 0.6 0.8 ?25 0 25 50 75 100 125 150 i d = 1.5 a tc = 25c v dd = 10 v v ds v gs 50 v v dd = 50 v 25 v 10 v 25 v ?5 v, ?10 v pulse test tc = 25c v gs = 5 v 10 v 1 ma i d = 10 ma v gs = 0 v gs = 0 v f = 1 mhz coss crss ciss 0 0 v 0 0 1 10 100 1000 0.01 0.1 1 10 t d(off) t d(on) t r t f v dd = 10 v v gs = 10 v rg = 4.7 p w = 5 s tc = 25c
rqk0605jgdqa preliminary r07ds0309ej0600 rev.6.00 page 6 of 7 jan 10, 2014 package dimensions mass (typ) [g] 0.011 previous code renesas code plsp0003zb-a mpak(t) / mpak(t)v jeita package code sc-59a ? 2013 renesas electronics corporation. all rights reserved. d e a aa b xsa m e h e a a 2 a 1 s b a-a section c qc l l 1 l p a 3 a a 1 a 2 a 3 b c d e e h e l l 1 l p x q 1.0 0 1.0 ? 0.35 0.1 2.7 1.35 ? 2.2 0.35 0.15 0.25 ? ? min nom dimensions in millimeters reference symbol max ? ? 1.1 0.25 0.4 0.16 ? 1.5 0.95 2.8 ? ? ? ? 0.3 1.3 0.1 1.2 ? 0.5 0.26 3.1 1.65 ? 3.0 0.75 0.55 0.65 0.05 ?
rqk0605jgdqa preliminary r07ds0309ej0600 rev.6.00 page 7 of 7 jan 10, 2014 ordering information orderable part number quan tity shipping container rqk0605jgdqatl-h 3000 pcs. 178 mm reel, 8 mm emboss taping
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